An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions

Abstract

An analytical model is presented for quasi-static capacitance of the space-charge region in a p–n junction. The model is valid for realistic junction doping profiles under any bias conditions. It consists of local models in three bias regions. For the high-reverse bias region, a novel analytical model is derived. For the moderate-bias region, an empirical model commonly used in SPICE is adopted. Finally, for the high-forward bias region, the junction profiles are approximated by linearly-graded junctions. Existing analytical models are then modified appropriately to characterize both high-injection and heavy-doping effects for advanced bipolar transistors. Compared to previously developed analytical models or existing empirical models, as well as numerical simulation results, the analytical model presented here shows an improved accuracy and therefore provides a better tool for both device and circuit simulations.