Abstract
An analytical model for the surface potential and electric field distributions of silicon-on-insulator (SOI) triple REduced SURface Field (RESURF) devices has been presented on the basis of the two-dimensional Poisson equation. Meanwhile, the lateral breakdown voltages for N+N and P+N junctions as well as the vertical breakdown voltage are derived. Further, the influence of P-buried layer concentration on the surface electric field and the breakdown voltage is investigated in detail. All analytical results are well verified by simulation results conducted by MEDICI, showing the validity of the presented model.
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