Abstract
An analytical model is presented to determine the potential and electric field distribution along the semiconductor surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semi-insulating polycrystalline silicon (SIPOS) layer inserted between a silicon layer and a buried oxide. An improvement in the breakdown voltage due to the presence of the SIPOS shielding layer is demonstrated. Numerical simulations using medici are shown to support the analytical model.
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