Abstract
An analytical model for the intrinsic capacitances in the strong inversion regime of short-channel MOS transistors is developed. The mode is based on the computation of the charges associated with the four terminals of the device. The model has followed the charge-based approach, which consists of defining charges rather than capacitances as the state variables, thus avoiding the charge nonconservation problem associated with J.E. Meyer's (1971) approach. Major second-order effects such as carrier velocity saturation, mobility degradation, and channel length modulation are included in the model. The theoretical predictions of the model are compared to the numerically simulated data resulting from CADDETH and are found to be in good agreement over a wide range of gate and drain voltages. >
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