An analytical model for electrostatics of strained-Si n-type metal-oxide-semiconductor capacitors

Abstract

We propose a semiclassically based analytical model for electrostatic properties of strained-Si (SS) n-type metal-oxide-semiconductor (MOS) devices. Our model explicitly incorporates the discontinuity of the dielectric constant across the SS/SiGe interface. The model is applied to calculate the threshold voltage reduction in SS devices. Comparison with results from an accurate, self-consistent, quantum-mechanical model, as well as with published experimental data, demonstrates that the predictions from the proposed analytical model are accurate provided that the SS layer is not too thin, and the Ge content in the SiGe buffer layer is not too high.