An Analytical Model for Electron Transport and Luminance in SrS:Cu,Ag ACTFEL Display Devices

V.P Singh,P Sivakumar,A Aguilera,E Forsythe,D.C Morton

doi:10.1109/ted.2003.822596

An Analytical Model for Electron Transport and Luminance in SrS:Cu,Ag ACTFEL Display Devices

V.P Singh, P Sivakumar + Show 3 more

https://doi.org/10.1109/ted.2003.822596

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Journal: IEEE Transactions on Electron Devices	Publication Date: Mar 1, 2004
Citations: 8

Affiliation: University of Kentucky, DEVCOM Army Research Laboratory

#Deep Interface States #Luminance Mechanisms + Show 8 more

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Abstract

An analytical model is developed to explain electron transport and luminance mechanisms in SrS:Cu,Ag ac thin film electroluminescent (ACTFEL) display devices. The model includes shallow and deep interface states, bulk traps, and impact excitation and ionization of activators. Mathematical expressions describing optoelectronic processes in the phosphor layer and interface states are written and numerical solutions for field, current and luminance are obtained. Results of calculations are compared with experimental data. The model is able to simulate the dominant features of the experimental luminance and current waveforms.

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