Abstract
A compact analytical model for MOSFET channel-length modulation (CLM) based on momentum and energy-conservation of Boltzmann transport equation as well as quasi-2D formulation is presented. It is consistent with the generalized drift–diffusion formulation including the nonlocal electron temperature, which can be interpreted as being an effective CLM or effective velocity overshoot. The model has a simple familiar form of the “pinch-off” model, with one fitting parameter for the length- and bias-dependent effective saturation field and effective Early voltage. The model can be easily characterized with one measured I ds– V ds data and has been verified with submicron technology data for the full range of gate lengths and bias conditions.
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