Abstract
ABSTRACTAn analytical model of dual-material gate graded channel and dual oxide thickness cylindrical gate (DMG-GC-DOT) MOSFET is investigated in this work. Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is determined using the expressions of the current density. The device DMG-GC-DOT is compared with other structures such as DMG and DMG-DOT and demonstrates that our structure offers better immunity of short channel effects (incorporated in drain current model). The results obtained analytically are in agreement with those obtained by using the Silvaco Atlas-TCAD software.
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