Abstract
This paper presents a closed-form analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating in the “delayed-turn-on” regime at liquid nitrogen temperature. As verified by the low-temperature PISCES results [Kuo et al., IEEE Trans. Electron Devices 39, 348–355 (1992)], the closed-form analytical delayed-turn-on model provides a good explanation of the delayed-turn-on behavior.
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