An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors

Abstract

An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors (TMD NC-FETs) is proposed by solving the Schrodinger’s equation, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. Results predicted by the developed analytical model agree well with the experimental data. An amplified semiconductor surface potential and a steep subthreshold slope (SSmin=28 mV/dec) are obtained with suitable thicknesses of the ferroelectric film and gate dielectric layer. This model can be used to explore the operating mechanisms of TMD NC-FETs.