An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices

Abstract

This paper reports an analytical threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide. >