Abstract
An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson’s equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.
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