Abstract
An analytic method of microwave transistor oscillator design is developed, allowing one to define explicit expressions for optimum values of feedback elements and load through immitance parameters of the active two-port network. A negative resistance concept is used to design a series feedback microwave GaAs FET oscillator with optimized feedback elements and maximum output power in terms of the transistor impedance parameters. A large-signal model for GaAs FET is derived, based on its small-signal Z parameters and DC characteristics. Numerical results verify the validity of the design method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
