An analytic approach to tunnelling magnetoresistance

Abstract

We present an analytic model for the barrier transmission coefficient that can be used to calculate the tunnelling magnetoresistance (TMR) for metal–insulator–metal systems. It removes the approximations inherent in the Simmons’ and Brinkman models currently used to fit experimental systems that give much lower predictions of the barrier height than would be expected. The model is accurate enough to directly relate to the experiment and hence device optimisation by predicting junction parameters that are in line with bulk properties.