Abstract
The generation of an ion beam and its impact into photoresist-masked wafers will have an adverse effect on the vacuum of an ion implanter. This is particularly significant when doping with boron using BF 3 or BCl 3 as the source feed material. As well as affecting high voltage performance, poor vacuum will allow charge exchange and partial neutralization of the ion beam which could cause energy contamination as well as dosimetry errors. The nature of these effects depends not only on the system design but also on the implanted species and its charge state and energy. This paper discusses these effects on ion implanter performance and shows how a matrix-based general vacuum model may be used to investigate vacuum integrity. A time-dependent vacuum model that simulates the effect of pressure on dosimetry is also described.
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