Abstract
AbstractThermal properties of 405 nm GaN‐based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction‐up and junction‐down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction‐up bonding was ∼45 °C/W which was higher than that of a junction‐down bonded laser diode by ∼10 °C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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