Abstract
The molecular beam epitaxy process can produce single crystal and smooth surface at atomic level as well as synthesizing the desired material by supplying the multiple materials on substrates. This paper deals with an application of the hetero-epitaxial process of silicon carbide (SiC) on silicon (Si) substrate, and aims to make clear the attainable surface roughness and its properties. It was found that the steep pits were formed during the carbonization process before the epitaxy and that they strongly affected the final roughness. The attainable roughness was 0.4nm rms. Finally, the applicability to toroidal mirror optics was discussed.
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