Abstract
ABSTRACTIn this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.
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