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Abstract
We present nanoscale photodetectors based on two types of thin film hydrogenated amorphous silicon (a-Si:H), one of which is made of intrinsic a-Si:H and the other of n-type doped a-Si:H. 80 nm thick nanophotoconductors with different lengths (2-20 μm) and widths (60 nm-1 μm) are fabricated. The electronic properties of both types of photoconductores are characterized through the following techniques: the temperature dependence of the dark conductivity and determination of the activation energy of dark conductivity; the dependence of the photocurrent density with the photogeneration rate; and the spectral response of the photoconductor. This work demonstrates that a-Si:H photoconductors can be scaled down to nanoscale while maintaining the optoelectronic properties characteristic of their large-area (mm-size and above) counterparts.
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