Abstract
In this paper, efficiency variation with change in device parameters (layer thickness and doping concentration) has been investigated in an Al0.7Ga0.3As/Al0.48In0.52As heterojunction solar cell using Adept 1D simulation software. The device uses a n-type Al0.7Ga0.3As top layer (Emitter), a p-type Al0.48In0.52As middle layer (Base), and a p-type Ga0.67In0.33As bottom layer, which, under high doping, acts as a passivating (BSF) layer. Germanium (Ge) substrate (p-doped) is used for the structure. Variation in efficiency is plotted against a particular changing parameter, keeping every other parameter fixed at some default value. After analysing the variation curves, two optimized designs have been proposed, which yield 19.57% and 20.56% efficiency, respectively.
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