Abstract

Al/ lead monoxide (PbO) / p -Si structures were consructed to research the electrical properties of PbO interlayer and the conductance-voltage ( G-V ) and capacitance-voltage ( C-V ) characteristics of these structures at room temperature have been studied at 600kHz, 800kHz and 1MHz. The study of barrier height , series resistance ( R s ) and interface states density ( D it ) using G-V and C-V graphs in these structures has been reported. G and C measurements were obtained to be dependent on frequency and bias voltage.

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