Abstract

A novel one-diode model is proposed for illuminated solar cells, which contains an additional variable resistance describing minority carrier diffusion from the bulk to the p-n junction. This model naturally describes the differences between photo- and electroluminescence imaging, as well as a well-known departure from the superposition principle.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call