Abstract
For an ideal Si‐Ge solid solution deposited from an ideal vapor phase in a two phase solid solution‐vapor system, the equilibrium constant, , for the global process has been derived in terms of the equilibrium constant for the deposition of a pure solid phase. ,and the solid solution mole fraction of silicon species, , and has been shown to be . Derivation of the relationship for the germanium species is symmetrical to that for silicon and given by . © 1999 The Electrochemical Society. All rights reserved.
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