Abstract
An accurate modeling of an ion-implanted silicon MESFET device has been carried out considering a Gaussian-exponential distribution of impurities. Although two-dimensional analysis is essential for the characterization of the short-channel and submicrometer FET devices, one-dimensional analysis is fairly accurate for a moderately long-channel MESFETs fabricated with a shallow implanted channel where the concentration is highly nonlinear with depth. Potential distribution, channel charge, threshold voltage, I–V characteristics, mobility and transconductance of the Si MESFET device have been evaluated. The results show closer agreement with the experimentally obtained values compared to those obtained considering only Gaussian distribution of impurity profile.
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