Abstract
Differential gain and carrier lifetime have been deducedexperimentally for InGaN MQWs having different magnitudes of Incompositional fluctuation and defect density in the activelayer. It has been found that the compositional fluctuation anddifferential gain show a strong correlation in full accordance with the theoretical model for a band-tail modified by Incompositional fluctuation as described in the companion paper(part I). Several laser characteristics, threshold currentdensity, differential gain and response time, were found to beaffected by the compositional fluctuation and defect density.The optimization of these growth parameters for producinghigh-performance blue-violet InGaN MQW LDs is also discussed.
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