Abstract
We have developed a new layer stack based on the integration of active and passive devices in InGaAsP/InP using an MOVPE re-growth technique. The high quality of the new stack is shown by the performance of an all-optical wavelength converter. The converted wavelength showed a static extinction ratio of 33 dB and a − 1.5 dB power penalty in 2.5 Gb/s BER measurements. No error floor was detected.
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