Abstract
We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p–n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 1012 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.
Highlights
We propose and fabricate a heterojunction between Al-doped Zinc oxide (ZnO) and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method
Coussuet et al showed that a ZnO p–n junction with CuCrO2 p-type delafossite in core–shell structure has a high potential for UV photodetection with a fast response in order of microseconds and responsivity of 5.87 mA/W at 395 nm wavelength, which demonstrated the excellent properties of delafossite materials for UV detection[15]
All the aforementioned UV photodetectors were based on nanostructures that are more challenging for fabrication and practical applications in comparison with simple p-n thin films
Summary
We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. In the current study, to achieve a high-performance UV photodetector, we fabricate a p–n junction of Al-doped ZnO (AZO) as the n-type and (Mg, N) co-doped CuCrO2 as the p-type materials and analyze its UV-detection properties.
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