An All-Region I–V Model for 1-D Nanowire MOSFETs

Abstract

An all-region short-channel MOSFET, model is developed for nanowire semiconductors with 1-D density of states. It is shown that in the quantum capacitance limit, the long-channel saturation current exhibits a ( Vgs − Vt )3/2 dependence on gate voltage. With the velocity saturation effect implemented in the model, the Ids – Vgs characteristics of 1-D MOSFETs are compared to those of 2-D MOSFETs at 10-nm channel length. The above threshold model is joined with a subthreshold current model derived from short-channel solutions to form an I – V model continuous in all regions.