Abstract
A description of the pumping system and the main vacuum chamber with its associated devices is presented, and the merits and disadvantages of various features of the system are discussed. Oil diffusion pumping is used. The 35 litre main vacuum chamber is serviced by fourteen flanged access ports incorporating metal gasket seals. The associated devices mounted througj these ports allow in situ cleavage of substrate crystals which can be maintained at known temperatures. Controlled deposition of metals by evaporation onto crystal substrates can be followed by platinum shadowing and silicon monoxide backing under ultrahigh vacuum conditions. A comparison is made between the effectiveness of backing deposits within the ultrahigh vacuum chamber and in a separate vacuum chamber.
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