Abstract
We have proposed and fabricated AlGaN/GaN high electron mobility transistors (HEMTs) which increase the gate-drain breakdown voltage by employing a floating gate and a field plate. Experimental results show that the breakdown voltage of the proposed devices was successfully increased compared with that of the devices which employ only the floating gate in our previous report. High breakdown voltage of 484 V is obtained while the breakdown voltage of the conventional devices is 250 V. The leakage current is reduced considerably from 88 to 8.5 μA by employing the additional field plate. Measurement of dynamic characteristics shows that the proposed devices operate under high frequency inductive load switching without any current dispersion.
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