Abstract
In this paper, an AlGaN/GaN Field Effect Diode (FED) with high turn-on voltage (VON) controllability is proposed. The structural feature of a δ-doped GaN cap, an AlGaN barrier, and a GaN channel (GaN/AlGaN/GaN), and selective dry-etching of the GaN cap, ensure the precise control of VON which can be modulated by AlGaN barrier layer thickness. The VON as low as 0.3 V is obtained at the remained AlGaN thickness of 4-nm with an extremely low estimated VON deviation.
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