Abstract
We report on the room temperature, simple and cheap preparation by mechano-synthesis of polycrystalline targets of complex sulphide semiconductors, namely CuInS2 (CIS), to be used for film deposition in physical vacuum techniques such as PLD, sputtering or LT-PED. The sulphur (S)-based targets usually require expensive high pressure equipment to compensate the high S vapour pressure; nevertheless they are indispensable for the deposition of high band-gap semiconductor materials. The comparison of CIS films grown by mechano-synthesis and by commercial targets demonstrates similar material quality, making the mechano-synthesis a viable solution in the fabrication of high band-gap, S-based targets of complex chalcogenides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Semiconductor Science and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
