An advanced PSA technology for high-speed bipolar LSI

Abstract

An advanced method for polysilicon self-aligned (PSA) bipolar LSI technology has realized a miniaturized transistor for high performance. By introducing the overlapping structure for double polysilicon electrodes, the emitter area is reduced to 1 µm × 3 µm and the base junction is reduced to 0.3 µm. The CML integrated circuit composed of this transistor has achieved a minimum propagation delay time of 0.29 ns/gate with power dissipation of 1.48 mW/gate. Compared to the conventional PSA method, this technology promises to fabricate higher speed and higher density LSI's.