Abstract
In this paper, an advanced double SOI CMOS pixel detector termination with trench interspace is investigated. The proposed termination, where horizontal structure is replaced by the vertical structure, leads to an optimal distribution of electric fields and improves the breakdown voltage. Two-dimensional and three-dimensional physical level simulation results show that the termination presents superior breakdown and charge collection characteristics compared with the conventional termination structure even under irradiation. In addition, the impact of trench interspace dimension and oxide plug structure on the breakdown voltage of pixel detector have been studied.
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