Abstract
A novel active resistor circuit offering less sensitivity to process and temperature variations without any extra trimming is proposed. The circuit consists of two accurately matched, high resistance polysilicon (hripoly) resistors and a voltage-controlled MOS resistor, and it is designed for the industrial temperature range (-20 °C to 85 °C) in the TSMC 180 nm general-purpose process. The actual performance of the circuit is analyzed by using the Corner and Monte Carlo analyses that comprise two thousand samples for the global and local process variations. The maximum error in the resistor value is ±6.2 %, with the standard deviation of σ = 1.2 %. The proposed active resistor reduces the maximum error from ±15 % to ±6.2 % when the both the process and the temperature variations are considered without trimming. As an application, a transconductor and a current reference based on the novel active resistor are introduced, and their accuracy-related performance is studied.
Highlights
A T present, increasingly more integrated circuits (IC) require high accuracy components
A transconductor and a current reference based on the novel active resistor are introduced, and their accuracy-related performance is studied
This paper is organized as follows: In Section II, the impact of the process variation on the MOSFET‘s parameters is explained; Section III proposes a new active resistor and explains the basic principle; Section IV introduces the transistor level design of the circuit and demonstrates the simulation results; in Section V, the transconductor and current reference based on the novel active resistor are introduced and their accuracy-related performance studied; and Section VI highlights the major conclusions of the work
Summary
A T present, increasingly more integrated circuits (IC) require high accuracy components. The structures suffer from resistance nonlinearity, limited voltage ranges, and process variation [26]–[29] These drawbacks limit the use of the active resistor in applications such as current and voltage references and transconductors. This paper is organized as follows: In Section II, the impact of the process variation on the MOSFET‘s parameters is explained; Section III proposes a new active resistor and explains the basic principle; Section IV introduces the transistor level design of the circuit and demonstrates the simulation results; in Section V, the transconductor and current reference based on the novel active resistor are introduced and their accuracy-related performance studied; and Section VI highlights the major conclusions of the work
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