Abstract
An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 ?m SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is ?26 and ?34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.
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