An Active Absorber Based on Nonvolatile Floating-Gate Graphene Structure

Abstract

An active absorber with nearly zero static power consumption is proposed based on nonvolatile floating-gate graphene structure. Such absorber has almost no static power consumption benefited from the nonvolatile design. In such design, the central graphene can capture the tunneled electrons under the positive applied voltage, but cannot release these electrons after removing the voltage since it is electrically isolated from the external electrodes. Therefore, no extra power is needed to sustain the conductivity of graphene. Moreover, our proposed absorber exhibits an extremely strong absorption capacity. Even taking the strict condition for the bandwidth where all the absorptivity inside the bandwidth are larger than 90% as criterion, the proposed absorber provides more than 60 GHz absorption bandwidth which is twice larger than previous results. Furthermore, the proposed absorber shows high tolerance against large incidence angle ( $60^\circ $ ), different polarizations and nonideal factors of graphene. The results may promote various future nonvolatile absorber designs.