Abstract
This paper introduces an active millimeter-wave switch in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The active switch exhibits broadband performance (60 to 90 GHz, 40%), a gain of 10 dB with flat frequency response and average noise figure of 2.8 dB. The unilateral receiver topology is dedicated to radiometry applications. The design combines two input-matched low noise amplifiers with an output capacitance compensation network. The switch consumes 28 mW.
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