Abstract
A two dimensional numerical analysis has been made for MOS transistors with both small and large values of channel lenghts and various bias conditions. Results are compared with a simplified analysis of the MOST and with experimental data obtained on devices. Detailed pictures of the free carriers density distribution and of the voltage distribution are presented for various channel lengths and two dimensional effects are clearly seen near the source and the drain that are very hardly accounted for in a simplified one dimensional analysis. Such a program seems to be a very powerful tool for device optimisation and physical understanding of the behaviour of very small devices used in complex circuits.
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