Abstract

A novel charge-based intrinsic capacitance model of short-channel MOSFETs is proposed. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The simulation results clearly show the importance of the field-induced effects. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analogue MOS circuits. >

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call