An accurate two-dimensional CAD-oriented model of retrograde doped MOSFETs for improved short channel performance

Abstract

An analytical CAD-oriented model for short channel threshold voltage of retrograde doped MOSFETs is developed. The model is extended to evaluate the drain induced barrier lowering parameter ( R) and gradient of threshold voltage. The dependence of short channel threshold voltage and R on thickness of lightly doped layer ( d) has also been analyzed in detail. It is shown that a retrograde doping profile reduces short channel effects to a considerable extent. A technique is developed to optimize the device parameters for minimizing short channel effects. The results so obtained are in close proximity with published data.