An accurate preprocessor for Monte Carlo study of electron transport in inversion layers of silicon nMOSFETs

Abstract

Summary form only given. For a typical device simulation one cannot ignore the presence of nonuniformity in realistic MOSFET inversion layers. In this case, computationally demanding Schrodinger-MC-Poisson iteration (SMCPT) seems to be the only viable methodology. In this paper, we present an alternative approach that efficiently includes the quantization effect in the drift-diffusion preprocessing step such that the transport characteristics can be accurately captured without using a SMCPT. For this purpose, PISCES has been chosen as the preprocessor, allowing channel quantization effects to be ignored or treated with either of two models: the 3-subband model (3SB) and the van Dort model.