Abstract
AbstractIn this paper, an accurate parasitic parameters extraction method based on full wave electromagnetic for 0.1 μm GaN high electron mobility transistors (HEMTs) small‐signal equivalent circuit up to 110 GHz is presented. To describe the distribution effects of HEMTs electrodes at extremely high frequency, a 2‐stage distributed transmission line equivalent circuit model is also presented. To minimize the distribution effects, a shorter gate‐width device, called partial transistor model, is used to extract the second stage (N = 2) parasitic capacitance before extracting the first stage (N = 1) parameters. An AlGaN/GaN HEMT with gate length of 0.1 μm is used for validation, and the experimental results show that good agreement has been achieved between measured and simulated scattering (S) parameters up to 110 GHz.
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