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Abstract
An accurate dc model for FET's using two-dimensional (2- D) carrier gas flow adjacent to the heterointerface is described. The model, based on novel empirical velocity-field curve, also takes into consideration a parallel conduction in a selectively doped layer. In addition, it depends primarily on physical rather than empirical parameters. The calculated results are in excellent agreement with experimental data, even for short-channel 2-D electron gas (2-DEG) FET's at 77 K. The present model will therefore be a promising candidate for implementation on a circuit simulator.
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