Abstract
Memristors have become promising candidates for the advancement of recent technology as the miniaturization of complementary metal–oxide–semiconductor (CMOS) technology approaches its final stage. Nanoscale size, easy fabrication, compatibility with MOS, and diverse applications have accelerated these devices to new levels. In this paper, we discuss the merits and demerits of existing window functions and propose a novel window function that addresses their limitations. The suggested window function exhibits high nonlinearity at the boundaries and resolves other boundary issues. The results obtained using the proposed window function are compared with data reported in the literature to validate our design approach.
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