Abstract
In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations. All calculations have been executed by using ATK-VNL simulation package based on density functional theory (DFT). We have applied these calculations for carbon nanotube based SET; the nanotube has been placed just above the dielectric ( ) in between the source and drain electrodes of gold. The single walled carbon nanotube has been used in SET, which have ultra-small diameter and (4,0) configuration. The addition energy of the device has been calculated, which can be defined as the difference between the electron affinity, and ionization energies. The calculated values of energies have been found to be -10.17694 eV and -11.04034 eV for isolated phase and SET environment respectively. In electrostatic environment, the results were showing the regularization of molecular energy levels and therefore the addition energy reduced. The calculations for additional energies, variations of total energies to that of the gate voltages and charge stability diagram (CSD) have also been done in this study.
Highlights
Carbon nanotubes have been known to show astonishing electrical properties; could be used in electronic industry as a future alternative for Silicon based devices
It has been found that there is a reduction in electron affinity (EA) and in ionization energy (EI) in single electron transistor (SET) environment, which may due to the stabilization of charges due to electrostatic surrounding
For distinct charge states the variation of total energies with respect to gate voltage has shown in Fig. 2(a); in which different color map shows different charge states i.e. blue (-2), green (-1), red (0), turquoise (1), and violet (2)
Summary
Carbon nanotubes have been known to show astonishing electrical properties; could be used in electronic industry as a future alternative for Silicon based devices. After the completion of the modeling the structure, the SET configuration was used to calculate charge stability diagram (CSD), against the gate voltage the variation of total energies have been observed. It has been found that there is a reduction in electron affinity (EA) and in ionization energy (EI) in SET environment, which may due to the stabilization of charges due to electrostatic surrounding.
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