Abstract
A novel photoactive semiconductor (named as IDTOT-4F) with an A-π-D-π-A-type configuration is synthesized. It contains an electron-donating fused ring (D) as the core flanked with two π-spacers and is end-capped with two electron-withdrawing units (A). The intramolecular charge transfer effect endows IDTOT-4F with strong and broad light absorption and a relatively narrow band gap (1.46 eV). Thin-film optoelectrical devices based on IDTOT-4F exhibit both n-type and p-type switching behaviors. Besides, the p-channel device shows significantly photoresponsive performance with the maximum P (photo/dark current ratio), R (photoresponsivity), and D* (detectivity) values of around 60, 0.07 A W−1, and 2.5 × 1010 Jones, respectively. Further, IDTOT-4F based optoelectrical devices exhibit good optical memory characteristics with a time constant τ1 of 4.6 h, indicating its applicability to nonvolatile optical memory devices. The results provide new insights into the photoresponsive behavior of fused-ring semiconductors and pave the way for the design of nonvolatile optical memory devices.
Highlights
IntroductionOrganic photoresponsive semiconductors have drawn tremendous attentions as an exciting candidate for photodetectors (de Arquer et al, 2017; Park et al, 2018; Li et al, 2019; Huang et al, 2020), artificial synaptic devices (Park and Lee, 2017; Dai et al, 2019; Deng et al, 2019; Yu et al, 2019; Shi et al, 2020), and nonvolatile memory (Leydecker et al, 2016; Cheng et al, 2018; Liu et al, 2019; Yu et al, 2019), owing to their facile structure modification, excellent optoelectronic properties, large scale fabrication, low temperature processing, and mechanical flexibility
A-π-D-π-A-type fused ring semiconductors have been widely used as non-fullerene acceptors in organic solar cells because of their wide spectral response ranging from visible region to near-infrared region, narrow band gaps, and high absorption coefficients (Yao et al, 2017; Hou et al, 2018; Liu et al, 2018; Yan et al, 2018)
The results provide new insights into the photoresponsive behavior of fused-ring semiconductors and pave the way for the design of nonvolatile optical memory devices
Summary
Organic photoresponsive semiconductors have drawn tremendous attentions as an exciting candidate for photodetectors (de Arquer et al, 2017; Park et al, 2018; Li et al, 2019; Huang et al, 2020), artificial synaptic devices (Park and Lee, 2017; Dai et al, 2019; Deng et al, 2019; Yu et al, 2019; Shi et al, 2020), and nonvolatile memory (Leydecker et al, 2016; Cheng et al, 2018; Liu et al, 2019; Yu et al, 2019), owing to their facile structure modification, excellent optoelectronic properties, large scale fabrication, low temperature processing, and mechanical flexibility. A-π-D-π-A-type fused ring semiconductors have been widely used as non-fullerene acceptors in organic solar cells because of their wide spectral response ranging from visible region to near-infrared region, narrow band gaps, and high absorption coefficients (Yao et al, 2017; Hou et al, 2018; Liu et al, 2018; Yan et al, 2018) Relying on these unique optical properties, it is believed that these A-π-D-π-A-type fused ring acceptors would be ideal candidates for organic photodetectors, near-infrared (NIR) image sensors, and even optical memory devices (Lee et al, 2019; Huang et al, 2020).
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