Abstract
This paper describes a broadband, doubled balanced diode ring mixer IC. The RF/LO frequency range is 18 to 40 GHz and the IF DC to 8 GHz. This chip is fabricated on the 0.15μm pHEMT GaAs process which is offered by WIN semiconductor. The modified Marchand balun is used to provide the differential signals for the mixer. The chip successfully get a conversion loss less than 12dB and decent LO to IF isolation of nearly over 20dB. The mixer's size is around 1.10mm×0.75mm.
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