Abstract
High-/spl kappa/ Al/sub 2/O/sub 3//Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the Al/sub 2/O/sub 3/-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al/sub 2/O/sub 3/-Si MOSFETs. Additionally, Al/sub 2/O/sub 3/-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al/sub 2/O/sub 3/-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500/spl deg/C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-/spl kappa/ to minimize interfacial reactions and crystallization of the high-/spl kappa/ material, and oxygen penetration in high-/spl kappa/ MOSFETs.
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