Abstract
The influence of the amplified luminescence (AL) and spreading of nonequilibrium charge carriers on the threshold, dynamic, and power characteristics of high-power InGaAs/AlGaAs laser diode arrays (LDAs) is studied. It is found that, depending on the near-field fill factor, the contribution of AL-induced recombination to the lasing threshold of LDAs may reach 11%. It is shown that the losses of the LDA pump energy, associated with the AL, increase with the injection current growth above its threshold value because of the increase in the intensity of radiation, propagating normally to the LDA cavity axis.
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